Point Defects in Amorphous and Nanocrystalline Fluorinated Silicon Films

نویسنده

  • D. MILOVZOROV
چکیده

Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durability and reproducibility properties of devices based on amorphous silicon. The conductivity properties are stable for nanocrystalline silicon film by electric field.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices*

Powder formation in silane plasmas has been considered as a technology drawback because it might lead to the formation of macroscopic defects in the deposited layers. Here we summarize our recent efforts in controlling the formation of powder precursors, in particular, nanocrystalline silicon particles, aiming at their incorporation in the films. Indeed, the incorporation of clusters and crysta...

متن کامل

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films C.Voz

In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...

متن کامل

Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the range of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, ...

متن کامل

Experimental investigations into the formation of nanoparticles in a/nc-Si:H thin films

Hydrogenated amorphous silicon thin films with nanocrystalline silicon inclusions sa /nc-Si:Hd have received considerable attention due to reports of electronic properties comparable to hydrogenated amorphous silicon sa-Si:Hd coupled with an improved resistance to the light-induced formation of defects. In this study, a /nc-Si:H thin films are synthesized via radio-frequency plasma-enhanced che...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2010